Quantum well interband semiconductor lasers highly tolerant to dislocations
نویسندگان
چکیده
III-V semiconductor lasers integrated on Si-based photonic platforms are eagerly awaited by the industry for mass-scale applications, from interconnect to on-chip sensing. The current understanding is that only quantum dot can reasonably operate at high dislocation densities generated III-V-on-Si heteroepitaxy, which induces non-radiative carrier recombination rates. Here we propose a strategy based type-II band alignment fabricate well highly tolerant dislocations. A mid-IR GaInSb/InAs interband cascade laser grown Si exhibits performances similar those of its counterpart native GaSb substrate, in spite density 10 8 c mathvariant="normal">m − 2 range. Over 3800 h continuous-wave operation data have been collected, giving an extrapolated mean time failure exceeding 312,000 h. This validates proposed and opens way new development.
منابع مشابه
Title Theory of magnetoelectric photocurrent generated by direct interband transitions in a semiconductor quantum well
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ژورنال
عنوان ژورنال: Optica
سال: 2021
ISSN: ['2334-2536']
DOI: https://doi.org/10.1364/optica.438272